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Volumn 27, Issue , 2012, Pages 240-246

Simulation of the anneal of ion implanted boron emitters and the impact on the saturation current density

Author keywords

Damage evolution; IBC; Ion Implantation; OED; Saturation current density

Indexed keywords


EID: 84894270787     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.07.058     Document Type: Conference Paper
Times cited : (12)

References (10)
  • 1
    • 80052084723 scopus 로고    scopus 로고
    • High quality ion implanted boron emitters in an interdigitated back contact solar cell with 20% efficiency
    • N. Bateman, P. Sullivan, C. Reichel, J. Benick, M. Hermle, "High quality ion implanted boron emitters in an interdigitated back contact solar cell with 20% efficiency", Energy Procedia, Vol. 8, (2011), 509.
    • (2011) Energy Procedia , vol.8 , pp. 509
    • Bateman, N.1    Sullivan, P.2    Reichel, C.3    Benick, J.4    Hermle, M.5
  • 3
    • 77955419082 scopus 로고    scopus 로고
    • Release D-2010. 03, Synopsys Inc. Zurich, Switzerland
    • Synopsys Sentaurus Process User's manual, Release D-2010. 03, Synopsys Inc. Zurich, Switzerland.
    • Synopsys Sentaurus Process User's Manual
  • 4
    • 0001229581 scopus 로고
    • Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon
    • K. Cho, M. Numan, T. G. Finstad et al., "Transient Enhanced Diffusion during rapid thermal annealing of boron implanted silicon" Appl. Phys. Lett. 47, 1321 (1985).
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 13-21
    • Cho, K.1    Numan, M.2    Finstad, T.G.3
  • 5
    • 0031333908 scopus 로고    scopus 로고
    • Modeling silicon implantation damage and transient enhanced diffusion effects for silicon technology developement
    • San Francisco (MRS Society)
    • M. D. Gilles, S. Yu, H. W. Kennel and P. A. Packan, "Modeling Silicon Implantation Damage and Transient Enhanced Diffusion effects for Silicon technology developement" in MRS, San Francisco 1997 (MRS Society).
    • (1997) MRS
    • Gilles, M.D.1    Yu, S.2    Kennel, H.W.3    Packan, P.A.4
  • 6
    • 9744227454 scopus 로고
    • Formation of stacking faults and enhanced diffusion in the oxidation of silicon
    • S. M. Hu, "Formation of stacking faults and enhanced diffusion in the oxidation of silicon" J. Appl. Phys. 45, 1567 (1974)
    • (1974) J. Appl. Phys. , vol.45 , pp. 1567
    • Hu, S.M.1
  • 7
    • 0023860584 scopus 로고
    • A systematic analysis of defects in Ion-Implanted silicon
    • K. S. Jones, S. Prussin and E. R. Weber "A systematic analysis of defects in ion-implanted silicon" Appl. Phys. A 1988, Volume 45, Number 1, Pages 1-34
    • (1988) Appl. Phys. A , vol.45 , Issue.1 , pp. 1-34
    • Jones, K.S.1    Prussin, S.2    Weber, E.R.3
  • 8
    • 0002538508 scopus 로고    scopus 로고
    • Size-Distribution and annealing behavior of EOR dislocation loops in siliconimplanted silicon
    • G. Z. Pan, K. N. Tu, and A. Prussin, "Size-distribution and annealing behavior of EOR dislocation loops in siliconimplanted silicon", J. Appl. Phys. 81, 78 (1997)
    • (1997) J. Appl. Phys. , vol.81 , pp. 7-8
    • Pan, G.Z.1    Tu, K.N.2    Prussin, A.3
  • 9
    • 0035333187 scopus 로고    scopus 로고
    • Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon
    • F. Cristiano, B. Colombeau, J. Grisolia, B. de Maudit et al, "Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon" Nucl. Instr. and Meth. in Phys. Res. B 178 (2001) 84-88
    • (2001) Nucl. Instr. and Meth. in Phys. Res. B , vol.178 , pp. 84-88
    • Cristiano, F.1    Colombeau, B.2    Grisolia, J.3    De Maudit, B.4
  • 10
    • 0026172209 scopus 로고
    • Studies of diffused Boron emitters: Saturation current, bandgap narrowing and surface recombination velocity
    • R. R. King and R. M. Swanson, "Studies of diffused Boron emitters: saturation current, bandgap narrowing and surface recombination velocity" IEEE Transactions on Electron Devices" 38 (1991) p. 1399
    • (1991) IEEE Transactions on Electron Devices , vol.38 , pp. 13-99
    • King, R.R.1    Swanson, R.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.