Improving the electrical performance of a CAFM for gate oxide reliability measurements

Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

Volumn , Issue , 2009, Pages 234-237

  Lanza, M ^a   Aguilera, L ^a   Porti, M ^a   Nafria M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN SPOTS; CONDUCTIVE ATOMIC FORCE MICROSCOPES; CURRENT DYNAMICS; ELECTRICAL PERFORMANCE; GATE OXIDE RELIABILITIES; METAL-OXIDE SEMICONDUCTORS; NEW APPLICATIONS; RELIABILITY EVALUATIONS;

ELECTRON DEVICES; GATES (TRANSISTOR); MOS DEVICES; SILICON COMPOUNDS;

GATE DIELECTRICS;

EID: 65249185478     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCED.2009.4800474     Document Type: Conference Paper

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