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Applied Physics Letters

Volumn 103, Issue 25, 2013, Pages

Selective charge doping of chemical vapor deposition-grown graphene by interface modification

(6) Wang, Shengnan a Suzuki, Satoru a Furukawa, Kazuaki a Orofeo, Carlo M a Takamura, Makoto a Hibino, Hiroki a

a NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR; CHEMICAL VAPOR DEPOSITIONS (CVD); GRAPHENE P-N JUNCTIONS; INTERFACE MODIFICATION; P AND N TYPES; RESIDUAL CARRIER CONCENTRATION; SCATTERING EFFECTS; VARIOUS SUBSTRATES;

ELECTRONIC PROPERTIES; FUNCTIONAL GROUPS; GRAPHENE; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTOR JUNCTIONS; SILANES; SUBSTRATES; VAPORS;

CHEMICAL VAPOR DEPOSITION;

EID: 84891385385 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4851915 Document Type: Article

Times cited : (17)

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