Study of band structure at the zn(s,o,oh)/cu(in,ga)se2 interface via rapid thermal annealing and their effect on the photovoltaic properties

ACS Applied Materials and Interfaces

Volumn 5, Issue 24, 2013, Pages 12921-12927

  Shin, Dong Hyeop ^a   Kim, Seung Tae ^a   Kim, Ji Hye ^a   Kang, Hee Jae ^b   Ahn, Byung Tae ^a   Kwon, Hyuksang ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Chungbuk National University   (South Korea)

Author keywords

Conduction band offset; Cu(In,Ga)Se2; Rapid thermal annealing; Zn(S,O,OH)

Indexed keywords

CHEMICAL-BATH DEPOSITION; CONDUCTION BAND OFFSET; CU (IN ,GA)SE; LONG-WAVELENGTH REGIONS; LOW TEMPERATURE PHOTOLUMINESCENCE; PHOTOVOLTAIC PROPERTY; REFLECTION ELECTRON ENERGY LOSS SPECTROSCOPIES; SECONDARY ION MASS SPECTROSCOPIES (SIMS);

ELECTRIC RESISTANCE; ELECTRON ENERGY LOSS SPECTROSCOPY; GALLIUM; HETEROJUNCTIONS; PHOTOVOLTAIC EFFECTS; QUALITY CONTROL; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; ZINC;

INTERFACES (MATERIALS);

COPPER; GALLIUM; INDIUM; INDIUM TIN OXIDE; NANOMATERIAL; SELENIUM; TIN DERIVATIVE; ZINC;

ARTICLE; CHEMISTRY; SOLAR ENERGY; TEMPERATURE;

COPPER; GALLIUM; INDIUM; NANOSTRUCTURES; SELENIUM; SOLAR ENERGY; TEMPERATURE; TIN COMPOUNDS; ZINC;

EID: 84891380557     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am403488h     Document Type: Article

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