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Volumn 4, Issue 9, 2011, Pages 3487-3493
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Alignment of energy levels at the ZnS/Cu(In,Ga)Se 2 interface
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Author keywords
[No Author keywords available]
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Indexed keywords
BANDBENDING;
CHEMICAL BATH;
CHEMICAL COMPOSITIONS;
CHEMICAL-BATH DEPOSITION;
CO-EVAPORATIONS;
CONDUCTION BAND OFFSET;
CORE LEVELS;
CU(IN , GA)SE;
DEPTH-PROFILE ANALYSIS;
DESIGN OPTIMIZATION;
ETCHING PROCESS;
LINE EXCITATION;
OPTOELECTRONIC PROPERTIES;
VALENCE BAND EDGES;
VALENCE BAND OFFSETS;
ZNS FILMS;
ALIGNMENT;
BINDING ENERGY;
CONDUCTION BANDS;
COPPER;
CRYSTAL STRUCTURE;
ELECTRON INJECTION;
ELECTRON MOBILITY;
ELECTRONIC STRUCTURE;
HETEROJUNCTIONS;
OPTIMIZATION;
PHOTOELECTRON SPECTROSCOPY;
SEMICONDUCTOR DOPING;
SOLAR ENERGY;
ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;
VALENCE BANDS;
ZINC SULFIDE;
GALLIUM;
CHEMICAL COMPOSITION;
COPPER;
CRYSTAL STRUCTURE;
ELECTRICAL CONDUCTIVITY;
ELECTRON;
EVAPORATION;
FILM;
FUEL CELL;
GALLIUM;
INDIUM;
OPTIMIZATION;
SELENIUM;
SOLAR POWER;
SPECTROSCOPY;
SULFIDE;
ZINC;
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EID: 80052223824
PISSN: 17545692
EISSN: 17545706
Source Type: Journal
DOI: 10.1039/c1ee01292d Document Type: Article |
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Times cited : (42)
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References (15)
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