-
1
-
-
70449730669
-
Fundamentals of zinc oxide as a semiconductor
-
A. Janotti, and C.G. Van der Walle Fundamentals of zinc oxide as a semiconductor Rep. Prog. Phys. 72 2009 1 29
-
(2009)
Rep. Prog. Phys.
, vol.72
, pp. 1-29
-
-
Janotti, A.1
Van Der Walle, C.G.2
-
3
-
-
70350489206
-
ZnO nanostructures for dye-sensitized solar cells
-
Q. Zhang, C. Dandeneau, X. Zhou, and G. Cao ZnO nanostructures for dye-sensitized solar cells Adv. Mater. 21 2009 1 22
-
(2009)
Adv. Mater.
, vol.21
, pp. 1-22
-
-
Zhang, Q.1
Dandeneau, C.2
Zhou, X.3
Cao, G.4
-
4
-
-
77955683602
-
Synthesis and characterization of ZnO nanowires for nanosensor applications
-
O. Lupan, G. Emelchenko, V. Ursaki, G. Chai, A. Redkin, A. Gruzintsev, I. Tiginyanu, L. Chow, L. Ono, B. Cuenya, H. Heinrich, and E. Yakimov Synthesis and characterization of ZnO nanowires for nanosensor applications Mater. Res. Bull. 45 2010 1026 1032
-
(2010)
Mater. Res. Bull.
, vol.45
, pp. 1026-1032
-
-
Lupan, O.1
Emelchenko, G.2
Ursaki, V.3
Chai, G.4
Redkin, A.5
Gruzintsev, A.6
Tiginyanu, I.7
Chow, L.8
Ono, L.9
Cuenya, B.10
Heinrich, H.11
Yakimov, E.12
-
5
-
-
0032099920
-
Sol-gel preparation of transparent and conductive aluminum-doped zinc oxide films with highly preferential crystal orientation
-
M. Ohyama, H. Kozuka, and T. Yoko Sol-gel preparation of transparent and conductive aluminum-doped zinc oxide films with highly preferential crystal orientation J. Am. Ceram. Soc. 81 1998 1622 1632
-
(1998)
J. Am. Ceram. Soc.
, vol.81
, pp. 1622-1632
-
-
Ohyama, M.1
Kozuka, H.2
Yoko, T.3
-
7
-
-
0034972148
-
Physics and control of valence states in ZnO by codoping method
-
T. Yamamoto, and H. Yoshida Physics and control of valence states in ZnO by codoping method Physica B 302 2001 155 162
-
(2001)
Physica B
, vol.302
, pp. 155-162
-
-
Yamamoto, T.1
Yoshida, H.2
-
8
-
-
84875626854
-
4 segregation in high temperature sintered Al-doped ZnO sputtering target on optical and electrical properties of deposited thin films
-
4 segregation in high temperature sintered Al-doped ZnO sputtering target on optical and electrical properties of deposited thin films Surf. Coat. Technol. 221 2013 201 206
-
(2013)
Surf. Coat. Technol.
, vol.221
, pp. 201-206
-
-
Wei, T.1
Zhang, Y.2
Yang, Y.3
Tan, R.4
Cui, P.5
Song, W.6
-
9
-
-
29844435490
-
MBE growth of ZnO layers on sapphire employing hydrogen peroxide as an oxidant
-
A. Bakin, A. El-Shaera, A. Mofor, M. Kreye, A. Waag, F. Bertram, J. Christen, M. Heuken, and J. Stoimenosd MBE growth of ZnO layers on sapphire employing hydrogen peroxide as an oxidant J. Cryst. Growth 287 2006 7 11
-
(2006)
J. Cryst. Growth
, vol.287
, pp. 7-11
-
-
Bakin, A.1
El-Shaera, A.2
Mofor, A.3
Kreye, M.4
Waag, A.5
Bertram, F.6
Christen, J.7
Heuken, M.8
Stoimenosd, J.9
-
10
-
-
76449088733
-
The competition growth of ZnO microrods and nanorods in chemical bath deposition process
-
Z. Yang, Y. Shi, X. Sun, H. Cao, H. Lu, and X. Liu The competition growth of ZnO microrods and nanorods in chemical bath deposition process Mater. Res. Bull. 45 2010 474 480
-
(2010)
Mater. Res. Bull.
, vol.45
, pp. 474-480
-
-
Yang, Z.1
Shi, Y.2
Sun, X.3
Cao, H.4
Lu, H.5
Liu, X.6
-
11
-
-
33845966042
-
Solvothermal growth of ZnO
-
D. Ehrentraut, H. Sato, Y. Kagamitania, H. Sato, A. Yoshikawa, and T. Fukuda Solvothermal growth of ZnO Prog. Cryst. Growth Charact. 52 2006 280 335
-
(2006)
Prog. Cryst. Growth Charact.
, vol.52
, pp. 280-335
-
-
Ehrentraut, D.1
Sato, H.2
Kagamitania, Y.3
Sato, H.4
Yoshikawa, A.5
Fukuda, T.6
-
13
-
-
0346134896
-
Semiconductor clusters in the sol-gel process: Quantized aggregation, gelation, and crystal growth in concentrated ZnO colloids
-
L. Spanhel, and M. Anderson Semiconductor clusters in the sol-gel process: quantized aggregation, gelation, and crystal growth in concentrated ZnO colloids J. Am. Chem. Soc. 113 1991 2826 2833
-
(1991)
J. Am. Chem. Soc.
, vol.113
, pp. 2826-2833
-
-
Spanhel, L.1
Anderson, M.2
-
14
-
-
84857453816
-
Investigation of electronic and optical properties in Al-Ga codoped ZnO thin films
-
W. Lee, S. Shin, D. Jung, J. Kim, C. Nahm, T. Moon, and B. Park Investigation of electronic and optical properties in Al-Ga codoped ZnO thin films Curr. Appl. Phys. 12 2012 628 631
-
(2012)
Curr. Appl. Phys.
, vol.12
, pp. 628-631
-
-
Lee, W.1
Shin, S.2
Jung, D.3
Kim, J.4
Nahm, C.5
Moon, T.6
Park, B.7
-
15
-
-
78650261548
-
Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films
-
T. Wang, Y. Liu, Q. Fang, M. Wu, X. Sun, and F. Lu Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films Appl. Surf. Sci. 257 2011 2341 2345
-
(2011)
Appl. Surf. Sci.
, vol.257
, pp. 2341-2345
-
-
Wang, T.1
Liu, Y.2
Fang, Q.3
Wu, M.4
Sun, X.5
Lu, F.6
-
16
-
-
17144419709
-
Dependence of properties of N-Al codoped p-type ZnO thin films on growth temperature
-
J.G. Lu, L.P. Zhu, Z.Z. Ye, F. Zhuge, Y.J. Zeng, B.H. Zhao, and D.W. Ma Dependence of properties of N-Al codoped p-type ZnO thin films on growth temperature Appl. Surf. Sci. 245 2005 109 113
-
(2005)
Appl. Surf. Sci.
, vol.245
, pp. 109-113
-
-
Lu, J.G.1
Zhu, L.P.2
Ye, Z.Z.3
Zhuge, F.4
Zeng, Y.J.5
Zhao, B.H.6
Ma, D.W.7
-
17
-
-
84876727540
-
P-Type ZnO materials: Theory, growth, properties and devices
-
J.C. Fan, K.M. Sreekanth, Z. Xie, S.L. Change, and K.V. Rao p-Type ZnO materials: theory, growth, properties and devices Prog. Mater. Sci. 58 2013 874 985
-
(2013)
Prog. Mater. Sci.
, vol.58
, pp. 874-985
-
-
Fan, J.C.1
Sreekanth, K.M.2
Xie, Z.3
Change, S.L.4
Rao, K.V.5
-
18
-
-
29844447202
-
Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films
-
S. Kuo, W. Chen, F. Lai, C. Cheng, H. Kuo, S. Wang, and W. Hsieh Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films J. Cryst. Growth. 287 2006 78 84
-
(2006)
J. Cryst. Growth.
, vol.287
, pp. 78-84
-
-
Kuo, S.1
Chen, W.2
Lai, F.3
Cheng, C.4
Kuo, H.5
Wang, S.6
Hsieh, W.7
-
19
-
-
77957685359
-
Preparation and characterization of sol-gel Al-doped ZnO thin films and ZnO nanowire arrays grown on Al-doped ZnO seed layer by hydrothermal method
-
J. Zhang, and W. Que Preparation and characterization of sol-gel Al-doped ZnO thin films and ZnO nanowire arrays grown on Al-doped ZnO seed layer by hydrothermal method Sol. Energy Mater. Sol. Cells 94 2010 2181 2186
-
(2010)
Sol. Energy Mater. Sol. Cells
, vol.94
, pp. 2181-2186
-
-
Zhang, J.1
Que, W.2
-
20
-
-
0036861522
-
Solid solubility limits of Ga and Al in ZnO
-
M. Yoon, S. Lee, H. Park, H. Kim, and M. Jang Solid solubility limits of Ga and Al in ZnO J. Mater. Sci. Lett. 21 2002 1703 1704
-
(2002)
J. Mater. Sci. Lett.
, vol.21
, pp. 1703-1704
-
-
Yoon, M.1
Lee, S.2
Park, H.3
Kim, H.4
Jang, M.5
-
21
-
-
0001106216
-
On the optical band gap of zinc oxide
-
V. Srikant, and D. Clarke On the optical band gap of zinc oxide J. Appl. Phys. 83 1998 5447 5451
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 5447-5451
-
-
Srikant, V.1
Clarke, D.2
-
22
-
-
84881123415
-
Optical band gap and the Burstein-Moss effect in iodine doped PbTe using diffuse reflectance infrared Fourier transform spectroscopy
-
Z. Gibbs, A. LaLonde, and G. Snyder Optical band gap and the Burstein-Moss effect in iodine doped PbTe using diffuse reflectance infrared Fourier transform spectroscopy New J. Phys. 15 2013 1 18
-
(2013)
New J. Phys.
, vol.15
, pp. 1-18
-
-
Gibbs, Z.1
Lalonde, A.2
Snyder, G.3
-
23
-
-
0037355754
-
Comparison of electronic structure of doped ZnS and ZnO calculated by a first-principle pseudopotential method
-
Y. Imai, A. Watanabe, and I. Shimono Comparison of electronic structure of doped ZnS and ZnO calculated by a first-principle pseudopotential method J. Mater. Sci. Mater. Electron. 14 2003 149 156
-
(2003)
J. Mater. Sci. Mater. Electron.
, vol.14
, pp. 149-156
-
-
Imai, Y.1
Watanabe, A.2
Shimono, I.3
-
24
-
-
18244431984
-
Codoping for the fabrication of p-type ZnO
-
T. Yamamoto Codoping for the fabrication of p-type ZnO Thin Solid Films 420 2002 100 106
-
(2002)
Thin Solid Films
, vol.420
, pp. 100-106
-
-
Yamamoto, T.1
-
25
-
-
77950338677
-
Al-doped ZnO: Electronic, electrical and structural properties
-
F. Maldonado, and A. Stashans Al-doped ZnO: electronic, electrical and structural properties J. Phys. Chem. Solids 71 2010 784 787
-
(2010)
J. Phys. Chem. Solids
, vol.71
, pp. 784-787
-
-
Maldonado, F.1
Stashans, A.2
-
26
-
-
84877703366
-
Opto-electronic properties of molybdenum doped indium tin oxide nanostructured thin films prepared via sol-gel spin coating
-
S. Mohammadi, H. Abdizadeh, and M.R. Golobostanfard Opto-electronic properties of molybdenum doped indium tin oxide nanostructured thin films prepared via sol-gel spin coating Ceram. Int. 39 2013 6953 6961
-
(2013)
Ceram. Int.
, vol.39
, pp. 6953-6961
-
-
Mohammadi, S.1
Abdizadeh, H.2
Golobostanfard, M.R.3
-
27
-
-
34548488732
-
Conductivity increase of ZnO:Ga films by rapid thermal annealing
-
V. Khranovskyy, U. Grossner, V. Lazorenko, G. Lashkarev, B. Svensson, and R. Yakimova Conductivity increase of ZnO:Ga films by rapid thermal annealing Superlattice. Microst. 42 2007 379 386
-
(2007)
Superlattice. Microst.
, vol.42
, pp. 379-386
-
-
Khranovskyy, V.1
Grossner, U.2
Lazorenko, V.3
Lashkarev, G.4
Svensson, B.5
Yakimova, R.6
|