Optical band gap and the Burstein-Moss effect in iodine doped PbTe using diffuse reflectance infrared Fourier transform spectroscopy

New Journal of Physics

Volumn 15, Issue , 2013, Pages

  Gibbs, Zachary M ^a   Lalonde, Aaron ^b   Snyder, G Jeffrey ^b  

^a California Institute of Technology   (United States)

^b California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; IODINE; IV-VI SEMICONDUCTORS; LEAD COMPOUNDS; LIGHT ABSORPTION; NARROW BAND GAP SEMICONDUCTORS; OPTICAL BAND GAPS; REFLECTION; SEMICONDUCTOR DOPING; TELLURIUM COMPOUNDS; THERMOELECTRICITY;

BAND GAP RENORMALIZATION; DIFFUSE REFLECTANCE INFRARED FOURIER TRANSFORM SPECTROSCOPIES; ELECTRON-EXCHANGE INTERACTION; NARROW-GAP SEMICONDUCTORS; OPTICAL ABSORPTION EDGE; RENORMALIZATION EFFECTS; THERMO-ELECTRIC MATERIALS; TRANSPORT MEASUREMENTS;

ENERGY GAP;

EID: 84881123415     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/15/7/075020     Document Type: Article

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