메뉴 건너뛰기




Volumn , Issue , 2007, Pages 413-416

Evolution of CMOS Technology at 32 nm and beyond

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS;

EID: 84889872550     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2007.4405764     Document Type: Conference Paper
Times cited : (17)

References (11)
  • 1
    • 0002007506 scopus 로고
    • Progress in digital integrated electronics
    • G. Moore, "Progress in digital integrated electronics", IEDM Tech. Dig., p. 11, 1975.
    • (1975) IEDM Tech. Dig. , pp. 11
    • Moore, G.1
  • 2
    • 0016116644 scopus 로고
    • Design of ion-implanted mosfet's with very small physical dimensions
    • R. H. Dennard, et al, "Design of Ion-Implanted MOSFET's with Very Small Physical Dimensions, " IEEE J. Solid-State Circuits SC-9, p. 256, 1974.
    • (1974) IEEE J. Solid-State Circuits , vol.SC-9 , pp. 256
    • Dennard, R.H.1
  • 3
    • 84886448151 scopus 로고    scopus 로고
    • Full copper wiring in a sub-0. 25m CMOS ULSI technology
    • D. Edelstein, et al, "Full copper wiring in a sub-0. 25m CMOS ULSI technology", IEDM Tech. Dig., pp. 773, 1997.
    • (1997) IEDM Tech. Dig. , pp. 773
    • Edelstein, D.1
  • 4
    • 84886448134 scopus 로고    scopus 로고
    • A 0. 25m CMOS SOI technology and its application to 4 Mb SRAM
    • D. J. Schepis, et al, "A 0. 25m CMOS SOI technology and its application to 4 Mb SRAM", IEDM Tech. Dig., p. 587, 1997.
    • (1997) IEDM Tech. Dig. , pp. 587
    • Schepis, D.J.1
  • 5
    • 0032254781 scopus 로고    scopus 로고
    • Scalability of SOI technology into 0. 13m 1. 2V CMOS generation
    • E. Leobandung, et al, "Scalability of SOI technology into 0. 13m 1. 2V CMOS generation", IEDM Tech. Dig., p. 403, 1998.
    • (1998) IEDM Tech. Dig. , pp. 403
    • Leobandung, E.1
  • 6
    • 0035715842 scopus 로고    scopus 로고
    • An enhanced 130 nm generation logic technology featuring 60 nm transistors optimized for high performance and low power at 0. 7-1. 4 v
    • S. Thompson, et al, "An enhanced 130 nm generation logic technology featuring 60 nm transistors optimized for high performance and low power at 0. 7-1. 4 V", IEDM Tech. Dig., p. 257, 2001.
    • (2001) IEDM Tech. Dig., P. 257
    • Thompson, S.1
  • 7
    • 21644452652 scopus 로고    scopus 로고
    • Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
    • H. S. Yang, et al, "Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing", Tech. Dig., p. 1075, 2004.
    • (2004) Tech. Dig. , pp. 1075
    • Yang, H.S.1
  • 8
    • 33745148992 scopus 로고    scopus 로고
    • High Performance 65 nm SOI Technology with Dual Stress Liner and low capacitance SRAM cell
    • E. Leobandung, et al, "High Performance 65 nm SOI Technology with Dual Stress Liner and low capacitance SRAM cell", VLSI Tech Dig, 2005.
    • (2005) VLSI Tech Dig
    • Leobandung, E.1
  • 9
    • 33748532147 scopus 로고    scopus 로고
    • Optimizing CMOS technology for maximum performance
    • D. J. Frank, et al, "Optimizing CMOS technology for maximum performance", IBM Journal of Research and Development, p. 419, 2006.
    • (2006) IBM Journal of Research and Development , pp. 419
    • Frank, D.J.1
  • 10
    • 46049091002 scopus 로고    scopus 로고
    • Challenges and Opportunities for High Performance 32 nm CMOS Technology
    • J. Sleight, et al, "Challenges and Opportunities for High Performance 32 nm CMOS Technology", IEDM Tech. Dig., 2006.
    • (2006) IEDM Tech. Dig.
    • Sleight, J.1
  • 11
    • 36448952970 scopus 로고    scopus 로고
    • High-Performance High-/Metal Gates for 45nm CMOS and beyond with Gate-First Processing
    • M. Chudzik, et al, "High-Performance High-/Metal Gates for 45nm CMOS and Beyond with Gate-First Processing", VLSI Tech Dig, 2007.
    • (2007) VLSI Tech Dig
    • Chudzik, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.