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Applied Physics Letters

Volumn 103, Issue 23, 2013, Pages

Graphene/gallium arsenide-based Schottky junction solar cells

(3) Jie, Wenjing a Zheng, Fengang a Hao, Jianhua a

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BILAYER GRAPHENE; GAAS SUBSTRATES; GRAPHENE SHEETS; PERFORMANCE PARAMETERS; PHOTOVOLTAIC; POWER CONVERSION EFFICIENCIES; RECTIFYING CHARACTERISTICS; SCHOTTKY JUNCTIONS;

GALLIUM ARSENIDE; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING GALLIUM; VAPORS;

GRAPHENE;

EID: 84889779967 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4839515 Document Type: Article

Times cited : (87)

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