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Journal of Applied Physics

Volumn 112, Issue 5, 2012, Pages

In-plane dielectric properties of epitaxial Ba 0.7Sr 0.3TiO 3 thin films grown on GaAs for tunable device application

(2) Yang, Zhibin a Hao, Jianhua a

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BST FILM; DC BIAS; FREQUENCY AGILE; GAAS; GAAS SUBSTRATES; HETEROEPITAXIAL STRUCTURE; K FACTOR; LASER MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; SRTIO; STRUCTURAL CHARACTERISTICS; TIO; TUNABLE DEVICE;

DIELECTRIC MATERIALS; FERROELECTRICITY; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; THIN FILMS;

EPITAXIAL GROWTH;

EID: 84866428985 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4749270 Document Type: Conference Paper

Times cited : (12)

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