In-situ conductivity and Seebeck measurements of highly efficient n-dopants in fullerene C 60

Applied Physics Letters

Volumn 100, Issue 9, 2012, Pages

  Menke, Torben ^a   Ray, Debdutta ^a   Meiss, Jan ^a   Leo, Karl ^a   Riede, Moritz ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPED LAYERS; DOPING CONCENTRATION; ELECTRON TRANSPORT; FULLERENE C; HIGH CONDUCTIVITY; IN-SITU; IN-VACUUM; MODEL SYSTEM; N-DOPED; ORGANIC DOPANTS; ORGANIC ELECTRONIC DEVICES; SEEBECK; THERMAL ACTIVATION ENERGIES; VARIOUS SUBSTRATES;

ACTIVATION ENERGY; CHROMIUM COMPOUNDS; FULLERENES; TUNGSTEN COMPOUNDS;

DOPING (ADDITIVES);

EID: 84857985594     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3689778     Document Type: Article

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