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Volumn 25, Issue 33, 2013, Pages 4663-4667

High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films

Author keywords

blend aligned crystals; complementary inverters; electron traps; grain boundaries; organic electronics

Indexed keywords

COMPLEMENTARY INVERTERS; DOPING CONCENTRATION; HIGH MOBILITY; ORGANIC ELECTRONICS; ORGANIC THIN FILM TRANSISTORS; PENTACENE THIN FILMS; SCANNING AUGER MICROSCOPY; SECONDARY IONIZATION;

EID: 84883487143     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201205098     Document Type: Article
Times cited : (101)

References (36)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.