Controlled formation of charge depletion zones by molecular doping in organic pin-diodes and its description by the Mott-Schottky relation

Journal of Applied Physics

Volumn 111, Issue 12, 2012, Pages

  Kleemann, H ^a   Lussem B ^a   Leo, K ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR STATE; CHARGE DEPLETION; DEPLETION ZONES; DOPANT MOLECULES; DOPANT STATE; DOPED HOLES; DOPING PROCESS; ELECTRON TRANSPORT LAYERS; IMPEDANCE SPECTROSCOPY; KEY TECHNOLOGIES; MOLECULAR DOPING; MOTT-SCHOTTKY; PIN DIODE; SPATIAL FIELDS; STRUCTURAL DISORDERS; SYSTEMATIC STUDY; TEMPERATURE-DEPENDENT MEASUREMENTS;

ACTIVATION ENERGY; CAPACITANCE; LIGHT EMITTING DIODES; MOLECULES;

DOPING (ADDITIVES);

EID: 84863506614     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4730771     Document Type: Article

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