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Journal of Materials Chemistry

Volumn 17, Issue 14, 2007, Pages 1416-1420

Doping effect of solution-processed thin-film transistors based on polyfluorene

(8) Lim, Eunhee a,d Jung, Byung Jun a Chikamatsu, Masayuki b Azumi, Reiko b Yoshida, Yuji b Yase, Kiyoshi b Do, Lee Mi c Shim, Hong Ku a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

c Electronics and Telecommunications Research Institute (ETRI) (South Korea)

d UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); FLUORINE CONTAINING POLYMERS; HOLE MOBILITY; HYSTERESIS; THRESHOLD VOLTAGE;

DEVICE STABILITY; HOLE INJECTION; HYSTERESIS BEHAVIOR; ORGANIC THIN FILM TRANSISTORS (OTFT);

THIN FILM TRANSISTORS;

EID: 33947674841 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/b615720c Document Type: Article

Times cited : (68)

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