High-voltage capacitance measurement system for SiC power MOSFETs

2009 IEEE Energy Conversion Congress and Exposition, ECCE 2009

Volumn , Issue , 2009, Pages 1472-1479

  Ralston, Parrish ^a   Duong, T H ^b   Yang, Nanying ^a   Berning, D W ^b   Hood, Colleen ^b   Hefner, A R ^b   Meehan, Kathleen ^a  

^a Virginia Polytechnic Institute and State University   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Capacitance; CoolMOS; CV measurement; High voltage; LCR meter; Power MOSFET; Silicon carbide

Indexed keywords

C-V MEASUREMENT; COOLMOS; HIGH-VOLTAGES; LCR METERS; POWER MOSFET;

CAPACITANCE; CAPACITANCE MEASUREMENT; ENERGY CONVERSION; FADING (RADIO); FIELD EFFECT TRANSISTORS; MEASUREMENTS; MOSFET DEVICES; SILICON CARBIDE; VOLTAGE MEASUREMENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72449188706     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2009.5316221     Document Type: Conference Paper

References (9)

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3. A. Hefner, "Silicon-Carbide Power Devices for High-Voltage, High Frequency Power Conversion," in Applied Power Electronics Conference, 2005.
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9. R. S. Scott, G. A. Franz, and J. L. Johnson, "An Accurate Model for Power DMOSFET's Including Interelectrode Capacitances,"IEEE Transaction on Power Electrons, Vol. 6. No. 2. April, 1991.