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Applied Physics Express

Volumn 6, Issue 11, 2013, Pages

InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range

(4) Saito, Shinji a Hashimoto, Rei a Hwang, Jongil a Nunoue, Shinya a

a TOSHIBA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ENGINEERING; EXTERNAL QUANTUM EFFICIENCY; GROWTH CONDITIONS; HIGH-EFFICIENCY; INJECTION CURRENTS; OUTPUT POWER; SAPPHIRE SUBSTRATES; SPECTRAL RANGE;

SAPPHIRE;

LIGHT EMITTING DIODES;

EID: 84887716953 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.7567/APEX.6.111004 Document Type: Article

Times cited : (181)

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