메뉴 건너뛰기




Volumn , Issue , 2008, Pages

III-V on silicon for future high speed and ultra-low power digital applications: Challenges and opportunities

Author keywords

Digital logic; High speed; III V on silicon; Quantum well transistors; Ultra low power

Indexed keywords

BUFFER ARCHITECTURE; DIGITAL APPLICATIONS; DIGITAL LOGIC; DIGITAL LOGIC APPLICATIONS; HETEROGENEOUS INTEGRATION; HIGH SPEED; LOW SUPPLY VOLTAGES; ULTRA-LOW POWER;

EID: 84887496795     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (4)

References (15)
  • 3
    • 79956022434 scopus 로고    scopus 로고
    • Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
    • S.J. Wind, J. Appenzeller, R. Martel, V. Derycke and P. Avouris, "Vertical Scaling of Carbon Nanotube Field-Effect Transistors Using Top Gate Electrodes," Appl. Phys. Lett., Vol. 80, 2002, pp. 3817-3819.
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 3817-3819
    • Wind, S.J.1    Appenzeller, J.2    Martel, R.3    Derycke, V.4    Avouris, P.5
  • 6
    • 37249061772 scopus 로고    scopus 로고
    • High-k/Ge MOSFETs for future nanoelectronics
    • Jan-Feb
    • Y. Kamata, "High-k/Ge MOSFETs for future nanoelectronics," Materials Today, Vol. 11, No. 1-2, Jan-Feb 2008, pp. 30-38.
    • (2008) Materials Today , vol.11 , Issue.1-2 , pp. 30-38
    • Kamata, Y.1
  • 11
    • 30944450630 scopus 로고    scopus 로고
    • Opportunities and challenges of III-V nanoelectronics for future high-speed, low-power logic applications
    • Palm Springs, CA Nov
    • R. Chau, S. Datta, A. Majumdar, "Opportunities and Challenges of III-V Nanoelectronics for Future High-speed, Low-power Logic Applications," Technical Digest, IEEE Compound Semiconductor Integrated Circuit Symposium, Palm Springs, CA., Nov. 2005, pp. 17-20.
    • (2005) Technical Digest, IEEE Compound Semiconductor Integrated Circuit Symposium , pp. 17-20
    • Chau, R.1    Datta, S.2    Majumdar, A.3
  • 12
    • 50249144058 scopus 로고    scopus 로고
    • High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD al2o3, HfO2 and HfAlO as gate dielectrics
    • Y. Xuan, Y.Q. Wu, T. Shen, T. Yang and P.D. Ye, "High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics," IEDM Technical Digest, 2007, pp. 637-640.
    • (2007) IEDM Technical Digest , pp. 637-640
    • Xuan, Y.1    Wu, Y.Q.2    Shen, T.3    Yang, T.4    Ye, P.D.5
  • 15
    • 48649096271 scopus 로고    scopus 로고
    • Logic performance of 40nm InAs HEMTs
    • D-H. Kim and J. del Alamo, "Logic Performance of 40nm InAs HEMTs," IEDM Technical Digest, 2007, pp. 629-632.
    • (2007) IEDM Technical Digest , pp. 629-632
    • Kim, D.-H.1    Del Alamo, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.