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1
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35748969089
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Integrated nanoelectronics for the future
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Nov
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R. Chau, B. Doyle, S. Datta, J. Kavalieros and K. Zhang, "Integrated nanoelectronics for the future," Nature Materials, Vol. 6, Nov 2007, pp. 810-812.
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(2007)
Nature Materials
, vol.6
, pp. 810-812
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Chau, R.1
Doyle, B.2
Datta, S.3
Kavalieros, J.4
Zhang, K.5
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2
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15844407150
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Benchmarking nanotechnology for high-performance and low-power logic transistor applications
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March
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R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A. Majumdar, M. Metz and M. Radosavljevic, "Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications," IEEE Transactions on Nanotechnology, Vol. 4, No. 2, March 2005, pp. 153-158.
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(2005)
IEEE Transactions on Nanotechnology
, vol.4
, Issue.2
, pp. 153-158
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Chau, R.1
Datta, S.2
Doczy, M.3
Doyle, B.4
Jin, B.5
Kavalieros, J.6
Majumdar, A.7
Metz, M.8
Radosavljevic, M.9
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3
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79956022434
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Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
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S.J. Wind, J. Appenzeller, R. Martel, V. Derycke and P. Avouris, "Vertical Scaling of Carbon Nanotube Field-Effect Transistors Using Top Gate Electrodes," Appl. Phys. Lett., Vol. 80, 2002, pp. 3817-3819.
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(2002)
Appl. Phys. Lett.
, vol.80
, pp. 3817-3819
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Wind, S.J.1
Appenzeller, J.2
Martel, R.3
Derycke, V.4
Avouris, P.5
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5
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49149130850
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Pionics: The emerging science and technology of graphene-based nanoelectronics
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W. A. de Heer, C. Berger, E. Conrad, P. First, R. Murali and J. Meindl, "Pionics: the Emerging Science and Technology of Graphene-based Nanoelectronics," IEDM Technical Digest, 2007, pp. 199-202.
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(2007)
IEDM Technical Digest
, pp. 199-202
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De Heer, W.A.1
Berger, C.2
Conrad, E.3
First, P.4
Murali, R.5
Meindl, J.6
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6
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37249061772
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High-k/Ge MOSFETs for future nanoelectronics
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Jan-Feb
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Y. Kamata, "High-k/Ge MOSFETs for future nanoelectronics," Materials Today, Vol. 11, No. 1-2, Jan-Feb 2008, pp. 30-38.
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(2008)
Materials Today
, vol.11
, Issue.1-2
, pp. 30-38
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Kamata, Y.1
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7
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33750585580
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85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications
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S. Datta, T. Ashley, J. Brask, L. Buckle, M. Doczy, M. Emeny, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T.J. Phillips, D. Wallis, P. Wilding and R. Chau, "85nm Gate Length Enhancement and Depletion mode InSb Quantum Well Transistors for Ultra High Speed and very Low Power Digital Logic Applications," IEDM Technical Digest, 2005, pp. 783-786.
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(2005)
IEDM Technical Digest
, pp. 783-786
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Datta, S.1
Ashley, T.2
Brask, J.3
Buckle, L.4
Doczy, M.5
Emeny, M.6
Hayes, D.7
Hilton, K.8
Jefferies, R.9
Martin, T.10
Phillips, T.J.11
Wallis, D.12
Wilding, P.13
Chau, R.14
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8
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34547620506
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Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications
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July
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T. Ashley, L. Buckle, S. Datta, M.T. Emeny, D.G Hayes, K.P. Hilton, R. Jefferies, T. Martin, T.J. Philips, D.J. Wallis, P.J. Wilding and R. Chau, "Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications," Electronics Letters, Vol. 43, No. 14, July 2007.
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(2007)
Electronics Letters
, vol.43
, Issue.14
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Ashley, T.1
Buckle, L.2
Datta, S.3
Emeny, M.T.4
Hayes, D.G.5
Hilton, K.P.6
Jefferies, R.7
Martin, T.8
Philips, T.J.9
Wallis, D.J.10
Wilding, P.J.11
Chau, R.12
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9
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34547789291
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Ultrahigh-speed 0.5 V supply voltage in0.7Ga0.3As quantum-well transistors on silicon substrate
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S. Datta, G. Dewey, J. M. Fastenau, M. K. Hudait, D. Loubychev, W. K. Liu, M. Radosavljevic, W. Rachmady and R. Chau, "Ultrahigh-Speed 0.5 V Supply Voltage In0.7Ga0.3As Quantum-Well Transistors on Silicon Substrate," IEEE Electron Device Letters, Vol. 28, No.8, 2007, pp. 685-687.
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(2007)
IEEE Electron Device Letters
, vol.28
, Issue.8
, pp. 685-687
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Datta, S.1
Dewey, G.2
Fastenau, J.M.3
Hudait, M.K.4
Loubychev, D.5
Liu, W.K.6
Radosavljevic, M.7
Rachmady, W.8
Chau, R.9
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10
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49149131108
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3As quantum well transistor on silicon substrate using thin (< 2um) composite buffer architecture for high-speed and low-voltage (0.5V) logic applications
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3As Quantum Well Transistor on Silicon Substrate using Thin (< 2um) Composite Buffer Architecture for High-Speed and Low-Voltage (0.5V) Logic Applications," International Electron Devices Meeting (IEDM) Technical Digest, 2007, pp. 625-628.
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(2007)
International Electron Devices Meeting (IEDM) Technical Digest
, pp. 625-628
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Hudait, M.K.1
Dewey, G.2
Datta, S.3
Fastenau, J.M.4
Kavalieros, J.5
Liu, W.K.6
Lubyshev, D.7
Pillarisetty, R.8
Rachmady, W.9
Radosavljevic, M.10
Rakshit, T.11
Chau, R.12
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11
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30944450630
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Opportunities and challenges of III-V nanoelectronics for future high-speed, low-power logic applications
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Palm Springs, CA Nov
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R. Chau, S. Datta, A. Majumdar, "Opportunities and Challenges of III-V Nanoelectronics for Future High-speed, Low-power Logic Applications," Technical Digest, IEEE Compound Semiconductor Integrated Circuit Symposium, Palm Springs, CA., Nov. 2005, pp. 17-20.
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(2005)
Technical Digest, IEEE Compound Semiconductor Integrated Circuit Symposium
, pp. 17-20
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Chau, R.1
Datta, S.2
Majumdar, A.3
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12
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50249144058
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High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD al2o3, HfO2 and HfAlO as gate dielectrics
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Y. Xuan, Y.Q. Wu, T. Shen, T. Yang and P.D. Ye, "High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics," IEDM Technical Digest, 2007, pp. 637-640.
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(2007)
IEDM Technical Digest
, pp. 637-640
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Xuan, Y.1
Wu, Y.Q.2
Shen, T.3
Yang, T.4
Ye, P.D.5
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13
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34547141145
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High mobility p-channel HFETs using strained sb-based materials
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July
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J.B. Boos, B.R. Bennett, N.A. Papanicolaou, M.G. Ancona, J.G. Champlain, R. Bass and B.V. Shanabrook, "High mobility p-channel HFETs using strained Sb-based materials," Electronics Letters, Vol. 43 No. 15, July 2007.
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(2007)
Electronics Letters
, vol.43
, Issue.15
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Boos, J.B.1
Bennett, B.R.2
Papanicolaou, N.A.3
Ancona, M.G.4
Champlain, J.G.5
Bass, R.6
Shanabrook, B.V.7
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