Improved microwave noise and linearity performance in GaN MISHEMTs on silicon with ALD Al2O3 as gate dielectric

European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings

Volumn , Issue , 2010, Pages 41-44

  Liu, Z H ^a   Ng, G I ^a   Arulkumaran, S ^a   Maung, Y K T ^a   Teo, K L ^a   Foo, S C ^a   Vicknesh, S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Al2O3; GaN; Linearity; Metal insulator semiconductor high electron mobility transistor (MISHEMT); Noise

Indexed keywords

AL2O3; GAN; LINEARITY; METAL-INSULATOR-SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTOR (MISHEMT); NOISE;

ALUMINUM; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); LOW NOISE AMPLIFIERS; METAL INSULATOR BOUNDARIES; MICROWAVES; MIS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78649558054     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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