A 250-MHz 18-Mb Full Ternary CAM with Low-Voltage Matchline Sensing Scheme in 65-nm CMOS

IEEE Journal of Solid-State Circuits

Volumn 48, Issue 11, 2013, Pages 2671-2680

  Hayashi, Isamu ^a   Amano, Teruhiko ^a   Watanabe, Naoya ^a   Yano, Yuji ^a   Kuroda, Yasuto ^a   Shirata, Masaya ^a   Dosaka, Katsumi ^a   Nii, Koji ^a   Noda, Hideyuki ^a   Kawai, Hiroyuki ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Differential sense amplifier; Low voltage matchline; Reference voltage generator; Ternary content addressable memory (TCAM); Voltage down converter

Indexed keywords

MATCH LINE; REFERENCE VOLTAGE GENERATOR; SENSE AMPLIFIER; TERNARY CONTENT ADDRESSABLE MEMORY; VOLTAGE DOWN CONVERTERS;

CMOS INTEGRATED CIRCUITS;

TERNARY CONTENT ADRESSABLE MEMORY;

EID: 84887320340     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2013.2274888     Document Type: Article

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