AlN growth on sapphire substrate by ammonia MBE

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 145-150

  Mansurov, V G ^a   Nikitin, A Yu ^a   Galitsyn, Yu G ^a   Svitasheva, S N ^a   Zhuravlev, K S ^a   Osvath, Z ^b   Dobos, L ^b   Horvath, Z E ^b   Pecz, B ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

A1. Crystal morphology; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTOR MATERIALS;

CRYSTAL MORPHOLOGY; HILLOCKS; NITRIDATION;

ALUMINUM COMPOUNDS;

EID: 33847393722     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.006     Document Type: Article

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