AlN bandgap temperature dependence from its optical properties

Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 4007-4010

  Silveira, E ^a   Freitas, J A ^b   Schujman, S B ^c   Schowalter, L J ^c  

^a FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

^b NAVAL RESEARCH LABORATORY   (United States)

^c Crystal IS Inc   (United States)

Author keywords

B1. Nitrides; B2. Semiconducting aluminum compounds; B2. Semiconducting materials

Indexed keywords

ABSORPTION; ATOMS; BINDING SITES; CRYSTALLOGRAPHY; EXCITONS; GALLIUM ALLOYS; NUCLEAR ENERGY; NUCLEAR PHYSICS; OPTICAL MATERIALS; OPTICAL PROPERTIES; POTENTIAL ENERGY; SEMICONDUCTING CADMIUM TELLURIDE; SINGLE CRYSTALS; TEMPERATURE DISTRIBUTION;

B1. NITRIDES; B2. SEMICONDUCTING ALUMINUM COMPOUNDS; B2. SEMICONDUCTING MATERIALS; BAND GAPS; ENERGY RANGES; EXCITON-BINDING ENERGY; FREE EXCITON; GAP ENERGY; HIGH-QUALITY; LARGE BULK; LOW TEMPERATURE; OPTICAL REFLECTANCE; RE-CONDENSATION; ROOM TEMPERATURES; TEMPERATURE DEPENDENCES; TEMPERATURE EVOLUTION;

BINDING ENERGY;

EID: 49449115656     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.015     Document Type: Article

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