Cryogenic performance of low-noise InP HEMTs: A Monte Carlo study

IEEE Transactions on Electron Devices

Volumn 60, Issue 5, 2013, Pages 1625-1631

  Rodilla, Helena ^a   Schleeh, Joel ^a   Nilsson, Per Ake ^a   Wadefalk, Niklas ^a   Mateos, Javier ^b   Grahn, Jan ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

Cryogenic temperature; InGaAs InAlAs InP high electron mobility transistor (HEMT); Low noise; Monte Carlo simulations; Noise parameters

Indexed keywords

CHANNEL ELECTRONS; CRYOGENIC TEMPERATURES; ELECTRON VELOCITY; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); LOW NOISE; NOISE FIGURE DATA; NOISE PARAMETERS;

CRYOGENICS; MONTE CARLO METHODS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84887057710     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2253469     Document Type: Article

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