Evidence for hydrogen two-level systems in atomic layer deposition oxides

Applied Physics Letters

Volumn 103, Issue 16, 2013, Pages

  Khalil, M S ^a,b   Stoutimore, M J A ^a,b   Gladchenko, S ^a,b   Holder, A M ^c   Musgrave, C B ^c   Kozen, A C ^d   Rubloff, G ^d   Liu, Y Q ^e   Gordon, R G ^e   Yum, J H ^f   Banerjee, S K ^f   Lobb, C J ^b,g   Osborn, K D ^a  

^a LABORATORY FOR PHYSICAL SCIENCES   (United States)

^b Bldg 142   (United States)

^c UNIVERSITY OF COLORADO   (United States)

^d UNIVERSITY OF MARYLAND   (United States)

^e HARVARD UNIVERSITY   (United States)

^f The University of Texas at Austin   (United States)

^g UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CRYSTALLINE FILMS; ELECTRONIC DEVICE; IMPURITY ANALYSIS; IMPURITY CONCENTRATION; IMPURITY DISTRIBUTION; LOSS MEASUREMENT; ROOM TEMPERATURE;

ALUMINUM; AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; CRYSTALLINE MATERIALS; HYDROGEN; IMPURITIES; LANTHANUM ALLOYS; OXIDE FILMS; SECONDARY ION MASS SPECTROMETRY; SEEBECK EFFECT;

SEMICONDUCTOR DOPING;

EID: 84886432086     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4826253     Document Type: Article

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