Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates

Thin Solid Films

Volumn 520, Issue 7, 2012, Pages 3091-3095

  Yum, J H ^a,b   Akyol, T ^a   Lei, M ^c   Ferrer, D A ^a   Hudnall, Todd W ^d   Downer, M ^c   Bielawski, C W ^c   Bersuker, G ^b   Lee, J C ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d Texas State University   (United States)

Author keywords

Atomic layer deposition; Beryllium oxide; Metal oxide semiconductor; Thin films

Indexed keywords

ALD DIELECTRIC; AMORPHOUS STRUCTURES; AS-GROWN; ATOMIC LAYER DEPOSITED; ELECTRICAL ANALYSIS; ELECTRICAL CHARACTERISTIC; ELECTRICAL STRESS; EQUIVALENT OXIDE THICKNESS; FREQUENCY DISPERSION; GAAS SUBSTRATES; GATE DIELECTRIC LAYERS; INTERFACE DEFECTS; LOW DEFECT DENSITIES; METAL OXIDE SEMICONDUCTOR; PHYSICAL CHARACTERISTICS; POLYCRYSTALLINE; SELECTIVE AREA ELECTRON DIFFRACTION; SELF-CLEANING EFFECTS;

AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; ATOMS; BERYLLIA; BERYLLIUM; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; DEFECT DENSITY; DEFECTS; DEPOSITION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; FILM THICKNESS; GALLIUM ARSENIDE; GATE DIELECTRICS; HARMONIC GENERATION; INTERFACES (MATERIALS); NONLINEAR OPTICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VANADIUM; VAPOR DEPOSITION;

SEMICONDUCTING SILICON;

EID: 84856365753     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.11.053     Document Type: Article

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