Fast lateral amorphous-selenium metal-semiconductorMetal photodetector with high blue-to-ultraviolet responsivity

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 1953-1958

  Wang, Kai ^a,b   Chen, Feng ^a   Allec, Nicholas ^a   Karim, Karim S ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

^b Thunder Bay Regional Research Institute   (Canada)

Author keywords

Amorphous semiconductors; metalsemiconductormetal (MSM) devices; X ray image sensors

Indexed keywords

AMORPHOUS SELENIUM; COMPARATIVE STUDIES; FALL TIME; METALSEMICONDUCTORMETAL (MSM) DEVICES; MSM PHOTODETECTOR; OPTICAL SENSING; PHOTORESPONSES; RESPONSIVITY; SEMICONDUCTOR-METAL PHOTODETECTORS; SHORT WAVELENGTHS; SIGNAL RISE TIME; X-RAY IMAGE SENSORS; XRAY IMAGING;

AMORPHOUS SEMICONDUCTORS; DIGITAL IMAGE STORAGE; IMAGE SENSORS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SELENIUM; X RAY ANALYSIS; X RAY APPARATUS; X RAYS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 77955168215     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2051370     Document Type: Article

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