|
Volumn 82, Issue , 2014, Pages 100-106
|
Modeling of the atomic structure and electronic properties of amorphous GaN1-xAsx
|
Author keywords
Band Anticrossing (BAC); Continuous Random Network (CRN); GaNAs; Highly Mismatched Alloys (HMAs)
|
Indexed keywords
AVERAGE COORDINATION NUMBER;
BAND ANTI-CROSSING MODELS;
BAND ANTICROSSING;
CONTINUOUS RANDOM NETWORKS;
DENSITY FUNCTIONAL THEORY SIMULATIONS;
ELECTRONIC DENSITY STATE;
GANAS;
HIGHLY MISMATCHED ALLOYS (HMAS);
COMPUTER SIMULATION;
ELECTRIC NETWORK TOPOLOGY;
ELECTRONIC PROPERTIES;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
|
EID: 84886256914
PISSN: 09270256
EISSN: None
Source Type: Journal
DOI: 10.1016/j.commatsci.2013.09.039 Document Type: Article |
Times cited : (15)
|
References (24)
|