Optical transitions and the mobility edge in amorphous semiconductors: A joint density of states analysis

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Orapunt, Farida ^a   O'Leary, Stephen K ^b  

^a UNIVERSITY OF REGINA   (Canada)

^b UNIVERSITY OF WINDSOR   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SEMICONDUCTORS; AMORPHOUS SILICON; CONDUCTION BANDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HEAT CONDUCTION; IMAGE RETRIEVAL; OPTICAL PROPERTIES; OPTICAL TRANSITIONS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; VALENCE BANDS;

BAND REGIONS; DENSITY OF STATES; EDGE LOCATIONS; EMPIRICAL DENSITIES; FUNCTIONAL DEPENDENCIES; HYDROGENATED AMORPHOUS SILICONS; JOINT DENSITY OF STATES; LOCALIZED ELECTRONIC STATES; MODELING PARAMETERS; OPTICAL RESPONSES;

ELECTRONIC STATES;

EID: 54049102443     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2980329     Document Type: Article

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