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Applied Physics Letters

Volumn 77, Issue 8, 2000, Pages 1117-1119

Band gap engineering in amorphous AlxGa1-xN: Experiment and ab initio calculations

(4) Chen, Hong a Chen, Kuiying a Drabold, D A a Kordesch, M E a

a OHIO UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000630694 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1289496 Document Type: Article

Times cited : (65)

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