Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 250, Issue 1-2 SPEC. ISS., 2006, Pages 287-290

  Ridgway, M C ^a   Everett, S E ^a   Glover, C J ^a   Kluth, S M ^a   Kluth, P ^a   Johannessen, B ^a   Hussain, Z S ^a   Llewellyn, D J ^a   Foran, G J ^b   Azevedo, G de M ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

^c LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

Author keywords

Amorphous; EXAFS; GaAs; GaN; GaP; Ion irradiation

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; IRRADIATION; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS; EXTENDED X-RAY ABSORPTION FINE STRUCTURE (EXAFS); GAAS; GAN; GAP; ION IRRADIATION;

GALLIUM COMPOUNDS;

EID: 33746273742     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.04.125     Document Type: Article

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