Models of paracrystalline silicon with a defect-free bandgap

International Journal of Modern Physics B

Volumn 15, Issue 24-25, 2001, Pages 3253-3257

  Nakhmanson, S M ^a   Mousseau, N ^a   Barkema, G T ^b   Voyles, P M ^c,d   Drabold, D A ^a  

^a OHIO UNIVERSITY   (United States)

^b UTRECHT UNIVERSITY   (Netherlands)

^c University of Illinois at Urbana Champaign   (United States)

^d NEC LABORATORIES AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DERIVATIVE;

COMPUTER MODEL; CONFERENCE PAPER; CRYSTAL STRUCTURE; GEOMETRY; MOLECULAR DYNAMICS; MOLECULAR MODEL; OPTICAL RESOLUTION; PHASE TRANSITION; SEMICONDUCTOR; TOPOGRAPHY; VIBRATION;

EID: 0035841279     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217979201007580     Document Type: Conference Paper

References (12)