Structural and optical properties of Alx Ga1-xN nanowires

Physica Status Solidi - Rapid Research Letters

Volumn 7, Issue 10, 2013, Pages 868-873

  Pierret, A ^a,b   Bougerol, C ^a   Hertog, M den ^e   Gayral, B ^a   Kociak, M ^c   Renevier, H ^d   Daudin, B ^a  

^a CEA GRENOBLE   (France)

^b Centre National de la Recherche Scientifique   (France)

^c UNIVERSITÉ PARIS SUD   (France)

^d LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^e LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

Carrier localization; Composition fluctuation; Molecular beam epitaxy; Nanocathodoluminescence; Nanowires; Nitride semiconductors

Indexed keywords

CARRIER LOCALIZATION; CHEMICAL COMPOSITIONS; COMPOSITION FLUCTUATIONS; MICROPHOTOLUMINESCENCE; NANOCATHODOLUMINESCENCE; NITRIDE SEMICONDUCTORS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; STRUCTURAL AND OPTICAL PROPERTIES;

ALUMINUM; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; X RAY DIFFRACTION;

NANOWIRES;

EID: 84885862455     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201308009     Document Type: Article

References (20)

1. M. D. McCluskey, C. G. Van de Walle, L. T. Romano, B. S. Krusor, and N. M. Johnson, J. Appl. Phys. 93, 4340 (2003).
2. G. Steude, B. K. Meyer, A. Göldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano, and I. Akasaki, Appl. Phys. Lett. 74, 2456 (1999).
3. F. Yun, M. A. Reshchikov, L. He, T. King, H. Morkoç, S. W. Novak, and L. Wei, J. Appl. Phys. 92, 4837 (2002).
4. Q. Sun, H. Huang, W. Wang, J. Chen, R. Q. Jin, S. M. Zhang, H. Yang, D. S. Jiang, U. Jahn, and K. H. Ploog, Appl. Phys. Lett. 87, 121914 (2005).
5. A. Pinos, S. Marcinkevičius, J. Yang, Y. Nilenko, M. Shatalov, R. Gaska, and M. S. Shur, Appl. Phys. Lett. 95, 181914 (2009).
6. H. Sekiguchi, K. Kishino, and A. Kikuchi, Electron. Lett. 44, 151 (2010).
7. G. Tourbot, C. Bougerol, F. Glas, L. F. Zagonel, Z. Mahfoud, S. Meuret, P. Gilet, M. Kociak, B. Gayral, and B. Daudin, Nanotechnology 25, 135703 (2012).
8. A. Pierret, C. Bougerol, S. Murcia-Mascaros, A. Cros, H. Renevier, B. Gayral, and B. Daudin, Nanotechnology 24, 115704 (2013).
9. O. Landré, R. Songmuang, J. Renard, E. Bellet-Amalric, H. Renevier, and B. Daudin, Appl. Phys. Lett. 93, 183109 (2008).
10. V. Favre-Nicolin, M. Proietti, C. Leclere, N. Katcho, M.-I. Richard, and H. Renevier, Eur. Phys. J. Special Topics 208(1), 189 (2012).
11. J. Ristic, M. A. Sanchez-Garcia, E. Calleja, J. Sanchez-Paramo, J. M. Calleja, U. Jahn, and K. H. Ploog, Phys. Status Solidi A 192, 60 (2002).
12. J. C. Harmand, F. Glas, and G. Patriarche, Phys. Rev. B 81, 235436 (2010)
13. L. F. Zagonel, S. Mazzucco, M. Tencé, K. March, R. Bernard, B. Laslier, G. Jacopin, M. Tchernycheva, L. Rigutti, F. H. Julien, R. Songmuang, and M. Kociak, Nanoletters 11, 568 (2010).
14. P. Ruterana, G. De Saint Jores, M. Laügt, F. Omnes, and E. Bellet-Amalric, Appl. Phys. Lett. 78, 344 (2001).
15. Min Gao, S. T. Bradley, Yu Cao, D. Jena, Y. Lin, S. A. Ringel, J. Hwang, W. J. Schaff, and L. J. Brillson, J. Appl. Phys. 100, 103512 (2006).
16. D. Korakakis, K. F. Ludwig, and T. D. Moustakas, Appl. Phys. Lett. 71, 72 (1997).
17. K. Pakula, J. Borysiuk, R. Bozek, and J. M. Baranowski, J. Cryst. Growth 296, 191-196 (2006).
18. Q. Sun, H. Huang, W. Wang, J. Chen, R. Q. Jin, S. M. Zhang, H. Yang, D. S. Jiang, U. Jahn, and K. H. Ploog, Appl. Phys. Lett. 87, 121914 (2005).
19. F. Glas, Phys. Rev. B 74, 121302R (2006).
20. L. Rigutti, J. Teubert, G. Jacopin, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, F. H. Julien, F. Furtmayr, M. Stutzmann, and M. Eickhoff, Phys. Rev. B 82, 235308 (2010).