To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method

Journal of Crystal Growth

Volumn 363, Issue , 2013, Pages 25-32

  Fang, H S ^a   Pan, Y Y ^a   Zheng, L L ^b   Zhang, Q J ^a   Wang, S ^a   Jin, Z L ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

A1. Computer simulation; A1. Interface; A1. Stresses; A2. Czochralski method; B1. Sapphire

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; ELECTROMAGNETIC FIELDS; HEAT TRANSFER; SINGLE CRYSTALS; THERMAL STRESS;

CRYSTAL QUALITIES; CRYSTAL ROTATIONS; GLOBAL MODELING; GROWTH PARAMETERS; INTERFACE SHAPE; S/L INTERFACES; SAPPHIRE SINGLE CRYSTAL; VON MISES STRESS;

SAPPHIRE;

EID: 84885842615     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.09.050     Document Type: Article

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