Effects of RF coil position on the transport processes during the stages of sapphire Czochralski crystal growth

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1074-1079

  Lu, Chung Wei ^a   Chen, Jyh Chen ^b   Chen, Chien Hung ^b   Chen, Chun Hung ^b   Hsu, Wen Ching ^c   Liu, Che Ming ^c  

^a JEN TEH JUNIOR COLLEGE OF MEDICINE   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c Sino American Silicon Productions Inc   (Taiwan)

Author keywords

A1. Numerical investigation; A2. Crystal growth; A2. Czochralski method; B1. Sapphire crystal

Indexed keywords

A1. NUMERICAL INVESTIGATION; CRYSTAL GROWTH FURNACE; CRYSTAL GROWTH PROCESS; CRYSTAL LENGTH; CRYSTAL-MELT INTERFACE; CZOCHRALSKI; CZOCHRALSKI METHODS; FLOW TRANSPORT; INPUT POWER; MAXIMUM VALUES; NUMERICAL INVESTIGATIONS; POWER REQUIREMENT; RF COIL; SAPPHIRE CRYSTAL; TEMPERATURE GRADIENT; TRANSPORT PROCESS;

CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; GRAIN BOUNDARIES;

SAPPHIRE;

EID: 77949616367     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.037     Document Type: Article

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