Control of dislocation configuration in sapphire

Acta Materialia

Volumn 53, Issue 2, 2005, Pages 455-462

  Nakamura, Atsutomo ^a   Lagerlof K P D ^b   Matsunaga, Katsuyuki ^a   Tohma, Jun ^a   Yamamoto, Takahisa ^a   Ikuhara, Yuichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b Case Western Reserve University   (United States)

Author keywords

Al2O3 single crystal (sapphire); Dislocations; High temperature deformation; Transmission electron microscopy; Twinning

Indexed keywords

CHEMICAL MECHANICAL POLISHING; DEFORMATION; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; HIGH TEMPERATURE EFFECTS; IONIC CONDUCTION; POISSON RATIO; SAPPHIRE; SINGLE CRYSTALS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

Α-AL2O3 SINGLE CRYSTAL (SAPPHIRE); ELECTRONIC STATES; GLIDE DISLOCATIONS; HIGH TEMPERATURE DEFORMATION;

ALUMINA;

EID: 10044260704     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2004.10.002     Document Type: Article

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