Thermal stresses and cracks during the growth of large-sized sapphire with SAPMAC method

Chinese Journal of Aeronautics

Volumn 20, Issue 5, 2007, Pages 475-480

  Chenghai, Xu ^a   Songhe, Meng ^a   Mingfu, Zhang ^a   Hongbo, Zuo ^a   Guigen, Wang ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Crack; SAPMAC method; Sapphire; Thermal stress

Indexed keywords

CRACKS; CRYSTAL GROWTH; FINITE ELEMENT METHOD; GROWTH RATE; INTERFACES (MATERIALS); TENSILE STRESS; THERMAL STRESS;

DEFECT MODEL; GROWTH INTERFACES; SAPMAC METHOD; TAILING LOCATIONS;

SAPPHIRE;

EID: 35648994248     PISSN: 10009361     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1000-9361(07)60070-3     Document Type: Article

References (15)

1. Harris D C. Materials for infrared windows and domes. 2nd ed. USA: SPIE; 1999.
2. Gentilman R, McGuire P, Fiore D, et al. Large-area sapphire windows. SPIE 2003, 5078: 54-60.
3. Ni X, Fu Y, Moon Y T, et al. Optimization of (11-20) a-plane GaN growth by MOCVD on (1-102) r-plane sapphire. Journal of Crystal Growth 2006; 290: 166-170.
4. Foxon C T, Campion R P, Grant V A, et al. Use of band-gap thermometry to investigate the growth of GaN on sapphire and GaAs. Journal of Crystal Growth 2007; 301-302: 482-485.
5. 3/Si heteroepitaxial thin films by Raman spectroscopy. Journal of Crystal Growth 2005; 280(1-2): 222-226.
6. Xu C H, Zuo H B, Meng S H, et al. Simulation analysis on the SAPMAC crystal growth process of large size sapphire. Journal of Synthetic Crystal 2006; 35(5): 976-983.
7. Michael F M, Radiation heat transfer. New York: McGraw-Hill Ine, 1993.
8. Kobayashi N, Iwaki T. A thermoelastic analysis of the thermal stress produced in a semi-infinite cylindrical single crystal during the Czochralski growth. Journal of Crystal Growth 1985; 73, 96-110.
9. John W, Fischer W R, Harris D C. Strength of sapphire as a function of temperature and crystal orientation. SPIE 1990; 1326: 11-22.
10. Bunoiu O, Duffar T, Theodore F, et al. Numerical simulation of the flow field and solute segregation in edge-defined film-fed growth. Cryst Res Techno 2001; 36(7): 707-717.
11. Harris D C. Overview of progress in strengthening sapphire at elevated temperature. SPIE 1999; 3705: 2-11.
12. Theodore F, Duffar T, Santailler J L, et al. Crack generation and avoidance during the growth of sapphire domes from an element of shape. Journal of Crystal Growth 1999; 204: 317-324.
13. Nicoara I, Vizman D, Nicoara D. Thermal stresses in shaped semi-transparent crystals. Journal of Crystal Growth 1996; 169: 102-109.
14. Salem J, Powers L, Allen R, et al. Slow crack growth and fracture toughness of sapphire for a window application. SPIE 2001; 4375: 41-52.
15. Wang G G, Zhang M F, Zuo H B, et al. Study on inclusions in large sapphire optical crystal grown by SAPMAC method. Chinese Journal of Aeronautics 2006; 19(Supplement): S31-S35.