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Volumn , Issue , 2011, Pages
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Investigation of a high temperature oxide-trap activation model for SiC power MOSFETs
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION MODELS;
DMOSFET;
E-CENTER;
ELECTRON SPIN RESONANCE MEASUREMENTS;
ELEVATED TEMPERATURE;
GATE BIAS;
GATE-BIAS STRESS;
HIGH TEMPERATURE;
HOLE TRAP MODEL;
INTERFACIAL OXIDES;
MOSFETS;
N-CHANNEL;
NEGATIVE BIAS TEMPERATURE INSTABILITY;
ON STATE CURRENT;
OXIDE TRAPS;
POWER CONVERSION SYSTEMS;
POWER MOSFETS;
SELF-HEATING;
SI-SI BONDS;
SIC SUBSTRATES;
STRESS TESTING;
TEST STRUCTURE;
TUNNELING MECHANISM;
TUNNELING PROCESS;
U.S. ARMY;
CHEMICAL BONDS;
DEFECTS;
ELECTRIC FIELDS;
ELECTRON TUNNELING;
INTEGRATED CIRCUITS;
MOS DEVICES;
RESEARCH;
SEMICONDUCTING SILICON;
SILICON;
SILICON CARBIDE;
MOSFET DEVICES;
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EID: 84857225821
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ISDRS.2011.6135313 Document Type: Conference Paper |
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Times cited : (5)
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References (5)
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