Avalanche breakdown in multicrystalline solar cells due to preferred phosphorous diffusion at extended defects

Progress in Photovoltaics: Research and Applications

Volumn 21, Issue 7, 2013, Pages 1444-1453

  Bauer, Jan ^a   Lausch, Dominik ^b   Blumtritt, Horst ^a   Zakharov, Nikolai ^a   Breitenstein, Otwin ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b FRAUNHOFER CENTER FOR SILICON PHOTOVOLTAICS CSP   (Germany)

Author keywords

alkaline texture; avalanche breakdown; breakdown voltage; multicrystalline solar cells; p n junction

Indexed keywords

AVALANCHE BREAKDOWN; CURVATURE RADII; ELECTRON-BEAM-INDUCED CURRENT; MULTICRYSTALLINE SOLAR CELLS; P-N JUNCTION; PHOSPHOROUS DIFFUSION; REVERSE VOLTAGES; THEORETICAL LIMITS;

ELECTRIC BREAKDOWN; GRAIN BOUNDARIES; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS;

SOLAR CELLS;

EID: 84885697678     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2220     Document Type: Article

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