Influence of trench structures induced by texturization on the breakdown voltage of multicrystalline silicon solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 002913-002917

  Nievendick, Jan ^a   Kwapil, Wolfram ^b   Rentsch, Jochen ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN BEHAVIOR; CRITICAL LOCATION; ELECTRIC FIELD ENHANCEMENT; ETCH PITS; METAL PRECIPITATES; MULTI-CRYSTALLINE SILICON SOLAR CELLS; SCHOTTKY CONTACTS; STRONG ELECTRIC FIELDS; TEXTURIZATION;

ELECTRIC FIELDS; GRAIN BOUNDARIES; PHOTOVOLTAIC EFFECTS; POLYSILICON; SILICON WAFERS;

ELECTRIC BREAKDOWN;

EID: 84861017314     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186555     Document Type: Conference Paper

References (14)

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