Understanding junction breakdown in multicrystalline solar cells

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Breitenstein, Otwin ^a   Bauer, Jan ^a,f   Bothe, Karsten ^b   Kwapil, Wolfram ^c   Lausch, Dominik ^d   Rau, Uwe ^e   Schmidt, Jan ^b   Schneemann, Matthias ^e   Schubert, Martin C ^c   Wagner, Jan Martin ^a,g   Warta, Wilhelm ^c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^c FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^d FRAUNHOFER CENTER FOR SILICON PHOTOVOLTAICS CSP   (Germany)

^e FORSCHUNGSZENTRUM JÜLICH   (Germany)

^f CaliSolar GmbH   (Germany)

^g UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACID-ETCHING; AVALANCHE BREAKDOWN; CARRIER MULTIPLICATION; DOPING CONCENTRATION; ETCH PITS; IV CHARACTERISTICS; MULTI-CRYSTALLINE SILICON SOLAR CELLS; MULTICRYSTALLINE SOLAR CELLS; OHMIC SHUNTS; ONSET VOLTAGES; REVERSE BIAS; REVERSE CURRENTS; STEEP SLOPE; TEXTURIZATION; V-DEFECTS;

ETCHING; GRAIN BOUNDARIES; LASERS; NANOSTRUCTURED MATERIALS; POLYSILICON; SOLAR CELLS;

IMPACT IONIZATION;

EID: 79955444792     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3562200     Document Type: Conference Paper

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