Diode breakdown related to recombination active defects in block-cast multicrystalline silicon solar cells

Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

  Kwapil, Wolfram ^a   Kasemann, Martin ^b   Gundel, Paul ^a   Schubert, Martin C ^a   Warta, Wilhelm ^a   Bronsveld, Paula ^c   Coletti, Gianluca ^c  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

^c TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEFECTS; BREAKDOWN SITES; BREAKDOWN VOLTAGE; BROAD SPECTRAL; CAST MULTICRYSTALLINE SILICON; EXTREME CASE; HOT SPOT; MULTI-CRYSTALLINE SILICON SOLAR CELLS; RECOMBINATION ACTIVITY; REVERSE BIAS; REVERSE CURRENTS; THERMAL DEGRADATIONS; VISIBLE RANGE;

CELL MEMBRANES; DIODES; ELECTRIC BREAKDOWN; PHOTOVOLTAIC CELLS; POLYSILICON; SILICON SOLAR CELLS; SOLAR CELLS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70349634920     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3224908     Document Type: Article

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