High net doping concentration responsible for critical diode breakdown behavior of upgraded metallurgical grade multicrystalline silicon solar cells

Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

  Kwapil, Wolfram ^a   Wagner, Matthias ^b   Schubert, Martin C ^a   Warta, Wilhelm ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b SolarWorld Innovations GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEFECTS; BREAKDOWN BEHAVIOR; DOPING CONCENTRATION; FEEDSTOCK MATERIALS; METAL PRECIPITATES; METALLURGICAL-GRADE SILICON; MULTI-CRYSTALLINE SILICON; MULTI-CRYSTALLINE SILICON SOLAR CELLS; ONSET VOLTAGES; REVERSE BIAS; REVERSE CURRENTS; SCHOTTKY JUNCTIONS; SI WAFER; SOFT BREAKDOWN; SOLAR MODULE;

ELECTRIC FIELDS; METALLURGY; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON SOLAR CELLS; SOLAR CELLS;

SILICON WAFERS;

EID: 77955832379     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3463332     Document Type: Article

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