High-mobility organic thin-film transistors based on a small-molecule semiconductor deposited in vacuum and by solution shearing

Organic Electronics

Volumn 14, Issue 12, 2013, Pages 3213-3221

  Hofmockel, Robert ^a   Zschieschang, Ute ^a   Kraft, Ulrike ^a   Rödel, Reinhold ^a   Hansen, Nis Hauke ^b   Stolte, Matthias ^b   Würthner, Frank ^b   Takimiya, Kazuo ^c,d   Kern, Klaus ^a,e   Pflaum, Jens ^b   Klauk, Hagen ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c HIROSHIMA UNIVERSITY   (Japan)

^d RIKEN   (Japan)

^e EPFL   (Switzerland)

Author keywords

Contact resistance; Organic thin film transistors; Solution shearing; Thin film morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CONTACT RESISTANCE; DEPOSITION; FILM PREPARATION; MOLECULES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR GROWTH; SHEARING; SUBSTRATES; THIN FILM CIRCUITS; THIN FILMS; X RAY DIFFRACTION;

HIGH SUBSTRATE TEMPERATURE; ORGANIC THIN FILM TRANSISTORS; SMALL-MOLECULE ORGANIC SEMICONDUCTOR; SOLUTION SHEARING; THIN FILM MORPHOLOGY; THIN FILM TRANSISTORS (TFTS); TRANSMISSION LINE METHODS; X-RAY DIFFRACTION MEASUREMENTS;

THIN FILM TRANSISTORS;

EID: 84885504526     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2013.09.003     Document Type: Article

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