Contact resistance and megahertz operation of aggressively scaled organic transistors

Small

Volumn 8, Issue 1, 2012, Pages 73-79

  Ante, Frederik ^a   Kälblein, Daniel ^a   Zaki, Tarek ^b   Zschieschang, Ute ^a   Takimiya, Kazuo ^c   Ikeda, Masaaki ^d   Sekitani, Tsuyoshi ^e   Someya, Takao ^e   Burghartz, Joachim N ^b   Kern, Klaus ^a,f   Klauk, Hagen ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b Institut fur Mikroelektronik Stuttgart   (Germany)

^c HIROSHIMA UNIVERSITY   (Japan)

^d NIPPON KAYAKU CO LTD   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

^f EPFL   (Switzerland)

Author keywords

contact length; contact resistance; cutoff frequency; organic thin film transistors

Indexed keywords

CHANNEL LENGTH; CONTACT LENGTH; EFFECTIVE MOBILITIES; ON/OFF RATIO; ORGANIC THIN FILM TRANSISTORS; ORGANIC TRANSISTOR; RING OSCILLATOR; SIGNAL DELAYS; STATIC CHARACTERISTIC; TRANSFER LENGTHS;

CONTACT RESISTANCE; THIN FILM TRANSISTORS;

CUTOFF FREQUENCY;

EID: 84855426633     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201101677     Document Type: Article

References (37)

1. T. Someya, T. Sekitani, S. Iba, Y. Kato, H. Kawaguchi, T. Sakurai, Proc. Natl. Acad. Sci. USA 2004, 101, 9966.
2. S. Mannsfeld, B. Tee, R. Stoltenberg, C. Chen, S. Barman, B. Muir, A. Sokolov, C. Reese, Z. Bao, Nat. Mater. 2010, 9, 859.
3. I. Yagi, N. Hirai, Y. Miyamoto, M. Noda, A. Imaoka, N. Yoneya, K. Nomoto, J. Kasahara, A. Yumoto, T. Urabe, J. Soc. Inf. Display 2008, 16, 15.
4. G. H. Gelinck, H. E. A. Huitema, E. van Veenendaal, E. Cantatore, L. Schrijnemakers, J. B. P. H. van der Putten, T. C. T. Geuns, M. Beenhakkers, J. B. Giesbers, B. H. Huisman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. van Rens, D. M. de Leeuw, Nat. Mater. 2004, 3, 106.
5. H. Kawaguchi, T. Someya, T. Sekitani, T. Sakurai, IEEE J. Solid-State Circuits 2005, 40, 177.
6. H. Klauk, Chem. Soc. Rev. 2010, 39, 2643.
7. Y. Y. Noh, N. Zhao, M. Caironi, H. Sirringhaus, Nat. Nanotechnol. 2007, 2, 784.
8. U. Palfinger, C. Auner, H. Gold, A. Haase, J. Kraxner, T. Haber, M. Sezen, W. Grogger, G. Domann, G. Jakopic, J. R. Krenn, B. Stadlober, Adv. Mater. 2010, 22, 5115.
9. T. Yamamoto, K. Takimiya, J. Am. Chem. Soc. 2007, 129, 2224.
10. T. W. Kelley, L. D. Boardman, T. D. Dunbar, D. V. Muyres, M. J. Pellerite, T. P. Smith, J. Phys. Chem. B 2003, 107, 5877.
11. S. Lee, B. Koo, J. Shin, E. Lee, H. Park, H. Kim, Appl. Phys. Lett. 2006, 88, 162109.
12. D. Gundlach, L. Zhou, J. Nichols, T. Jackson, P. Necliudov, M. Shur, J. Appl. Phys. 2006, 100, 024509.
13. A. Benor, D. Knipp, Org. Electron. 2008, 9, 209.
14. V. Wagner, P. Wobkenberg, A. Hoppe, J. Seekamp, Appl. Phys. Lett. 2006, 89, 243515.
15. K. Myny, S. Steudel, S. Smout, P. Vicca, F. Furthner, B. van der Putten, A. Tripathi, G. Gelinck, J. Genoe, W. Dehaene, P. Heremans, Org. Electron. 2010, 11, 1176.
16. M. Kitamura, Y. Arakawa, Jpn. J. Appl. Phys. 2011, 50, 01BC01.
17. C. Shim, F. Maruoka, R. Hattori, IEEE Trans. Electron Devices 2010, 57, 95.
18. S. Wang, Y. Yan, K. Tsukagoshi, Appl. Phys. Lett. 2010, 97, 063307.
19. Y. Yan, X. She, H. Zhu, S. Wang, Org. Electron. 2011, 12, 823.
20. S. Luan, G. Neudeck, J. Appl. Phys. 1992, 72, 766.
21. M. Marinkovic, E. Hashem, K. Chan, A. Gordijn, H. Stiebig, D. Knipp, Appl. Phys. Lett. 2010, 97, 073502.
22. A. D. Franklin, Z. Chen, Nat. Nanotechnol. 2010, 5, 858.
23. J. Smith, Y. Zhao, C. Yang, J. Appenzeller, 68th Annual Device Research Conference (DRC) Technical Digest 2010, 139.
24. F. Xia, V. Perebeinos, Y. Lin, Y. Wu, P. Avouris, Nat. Nanotechnol. 2011, 6, 179.
25. D. J. Gundlach, T. N. Jackson, D. G. Schlom, S. F. Nelson, Appl. Phys. Lett. 1999, 74, 3302.
26. F. Letzkus, J. Butschke, B. Hoefflinger, M. Irmscher, C. Reuter, R. Springer, A. Ehrmann, J. Mathuni, Microelectron. Eng. 2000, 53, 609.
27. S. Jin, K. Jung, H. Shin, B. Park, J. Lee, Synth. Met. 2006, 156, 196.
28. K. Sidler, N. Cvetkovic, V. Savu, D. Tsamados, A. Ionescu, J. Brugger, Procedia Chem. 2009, 1, 762.
29. F. Fleischli, K. Sidler, M. Schaer, V. Savu, J. Brugger, L. Zuppiroli, Org. Electron. 2010, 12, 336.
30. F. Ante, F. Letzkus, J. Butschke, U. Zschieschang, K. Kern, J. N. Burghartz, H. Klauk, IEEE International Electron Devices Meeting (IEDM) Technical Digest 2010.
31. U. Zschieschang, F. Ante, D. Kälblein, T. Yamamoto, K. Takimiya, H. Kuwabara, M. Ikeda, T. Sekitani, T. Someya, J. Blochwitz-Nimoth, H. Klauk, Org. Electron. 2011, 12, 1370.
32. F. Ante, D. Kälblein, U. Zschieschang, T. W. Canzler, A. Werner, K. Takimiya, M. Ikeda, T. Sekitani, T. Someya, H. Klauk, Small 2011, 7, 1186.
33. J. Zaumseil, K. Baldwin, J. Rogers, J. Appl. Phys. 2003, 93, 6117.
34. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed., Wiley, New York 1998.
35. T. J. Richards, H. Sirringhaus, J. Appl. Phys. 2007, 102, 094510.
36. S. Scheinert, G. Paasch, J. Appl. Phys. 2009, 105, 014509.
37. P. Heremans, J. Genoe, S. Steudel, K. Myny, S. Smout, P. Vicca, C. Grillberger, O. R. Hild, F. Furthner, B. van der Putten, A. K. Tripathi, G. H. Gelinck, IEEE International Electron Devices Meeting (IEDM) Technical Digest 2009.