High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

Applied Physics Letters

Volumn 101, Issue 22, 2012, Pages

  Ou Yang, W ^a   Uemura, T ^a   Miyake, K ^a   Onish, S ^b   Kato, T ^b   Katayama, M ^b   Kang, M ^c   Takimiya, K ^c   Ikeda, M ^d   Kuwabara, H ^d   Hamada, M ^d   Takeya, J ^a  

^a OSAKA UNIVERSITY   (Japan)

^b DENSO CORPORATION   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

^d NIPPON KAYAKU CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; FIELD-INDUCED CARRIERS; GATE INSULATOR; HIGH CARRIER MOBILITY; HIGH-K DIELECTRIC; HIGH-K GATE DIELECTRICS; HIGH-K GATE INSULATOR; ORGANIC TRANSISTOR; POLYCRYSTALLINE FILM; SOLUTION-PROCESSED;

ALUMINUM COATINGS; CARRIER MOBILITY; ORGANIC FIELD EFFECT TRANSISTORS; SELF ASSEMBLED MONOLAYERS; THIOPHENE;

GATE DIELECTRICS;

EID: 84870573523     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4769436     Document Type: Article

References (24)

1. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. 14, 99 (2002). 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO;2-9
2. Z. Bao and J. Locklin, Organic Field-Effect Transistors (CRC, New York, 2007).
3. I. Kymissis, Organic Field Effect Transistors: Theory, Fabrication and Characterization (Springer, New York, 2008).
4. T. Yamamoto and K. Takimiya, J. Am. Chem. Soc. 129, 2224 (2007). 10.1021/ja068429z
5. H. Okamoto, N. Kawasaki, Y. Kaji, Y. Kubozono, A. Fujiwara, and M. Yamaji, J. Am. Chem. Soc. 130, 10470 (2008). 10.1021/ja803291a
6. T. Yamada, R. Kumai, Y. Takahashi, and T. Hasegawa, J. Mater. Chem. 20, 5810 (2010). 10.1039/c0jm01154a
7. H. Ebata, T. Izawa, E. Miyazaki, K. Takimiya, M. Ikeda, H. Kuwabara, and T. Yui, J. Am. Chem. Soc. 129, 15732 (2007). 10.1021/ja074841i
8. M. J. Kang, I. Doi, H. Mori, E. Miyazaki, K. Takimiya, M. Ikeda, and H. Kuwabara, Adv. Mater. 23, 1222 (2011). 10.1002/adma.201001283
9. T. Uemura, Y. Hirose, M. Uno, K. Takimiya, and J. Takeya, Appl. Phys. Express 2, 111501 (2009). 10.1143/APEX.2.111501
10. K. Nakayama, Y. Hirose, J. Soeda, M. Yoshizumi, T. Uemura, M. Uno, W. Li, M. J. Kang, M. Yamagishi, Y. Okada, E. Miyazaki, Y. Nakazawa, A. Nakao, K. Takimiya, and J. Takeya, Adv. Mater. 23, 1626 (2011). 10.1002/adma.201004387
11. C. Liu, T. Minari, X. Lu, A. Kumatani, K. Takimiya, and K. Tsukagoshi, Adv. Mater. 23, 523 (2011). 10.1002/adma.201002682
12. H. Minemawari, T. Yamada, H. Matsui, J. Tsutsumi, S. Haas, R. Chiba, R. Kumai, and T. Hasegawa, Nature 475, 364 (2011). 10.1038/nature10313
13. R. A. Street, J. E. Northrup, and A. Salleo, Phys. Rev. B 71, 165202 (2005). 10.1103/PhysRevB.71.165202
14. O. D. Jurchescu, M. Popinciuc, B. J. van Wees, and T. T. M. Palstra, Adv. Mater. 19, 688 (2007). 10.1002/adma.200600929
15. J. Takeya, M. Yamagishi, Y. Tominari, R. Hirahara, Y. Nakazawa, T. Nishikawa, T. Kawase, and T. Shimoda, Appl. Phys. Lett. 90, 102120 (2007). 10.1063/1.2711393
16. T. W. Kelley, L. D. Boardman, T. D. Dunbar, D. V. Muyres, M. J. Pellerite, and T. P. Smith, J. Phys. Chem. B 107, 5877 (2003). 10.1021/jp034352e
17. H. Klauk, M. Halik, U. Zschieschang, G. Schmid, and W. Radlik, J. Appl. Phys. 92, 5259 (2002). 10.1063/1.1511826
18. A. F. Stassen, R. W. I. de Boer, N. N. Iosad, and A. F. Morpurgo, Appl. Phys. Lett. 85, 3899 (2004). 10.1063/1.1812368
19. I. N. Hulea, S. Fratini, H. Xie, C. L. Mulder, N. N. Iossad, G. Rastelli, S. Ciuchi, and A. F. Morpurgo, Nat. Mater. 5, 982 (2006). 10.1038/nmat1774
20. D. Braga and G. Horowitz, Adv. Mater. 21, 1473 (2009). 10.1002/adma.200802733
21. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 852.
22. J. Takeya, T. Nishikawa, T. Takenobu, S. Kobayashi, Y. Iwasa, T. Mitani, C. Goldmann, C. Krellner, and B. Batlogg, Appl. Phys. Lett. 85, 5078 (2004). 10.1063/1.1826239
23. T. Uemura, R. Hirahara, Y. Tominari, S. Ono, S. Seki, and J. Takeya, Appl. Phys. Lett. 93, 263305 (2008). 10.1063/1.3059561
24. See supplementary material at http://dx.doi.org/10.1063/1.4769436 E-APPLAB-101-038250 for I-V characteristics of Figs. I(a) and I(b) for the evaporated and solution-processed devices for comparison and AFM images of Figs. II(a) and II(b) for proof.