Formation and characterization of Ta2O5/TaO x films formed by O ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 307, Issue , 2013, Pages 491-494

  Ruffell, S ^a   Kurunczi, P ^a   England, J ^a   Erokhin, Y ^a   Hautala, J ^a   Elliman, R G ^b  

^a APPLIED MATERIALS INC   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Ion implantation; Nonvolatile memory; Resistive switching; Tantalum oxide

Indexed keywords

CAPACITANCE; DEPTH PROFILING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; IONS; OXIDE FILMS; SWITCHING SYSTEMS; TANTALUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE VOLTAGE MEASUREMENTS; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ELECTRICAL MEASUREMENT; HIGH VOLUME MANUFACTURING; IMPLANTATION ENERGIES; NON-VOLATILE MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84885172387     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2012.11.092     Document Type: Article

References (15)

1. H.S.P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F.T. Chen, C. Tsai, Proc. IEEE 100 (2012) 1951-1970.
2. S.D. Ha, S. Ramanathan, J. Appl. Phys. 110 (2011) 071101.
3. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 21 (2009) 2632-2663.
4. L.F. Liu, B. Chen, B. Gao, F.F. Zhang, Y.S. Chen, X.Y. Liu, Y. Wang, R.Q. Han, J.F. Kang, Appl. Phys. A Mater. Sci. Process. 102 (2011) 991-996.
5. K.L. Lin, T.H. Hou, J. Shieh, J.H. Lin, C.T. Chou, Y.J. Lee, J. Appl. Phys. 109 (2011) 084104.
6. R. Mahapatra, A.B. Horsfall, N.G. Wright, J. Electron. Mater. 41 (2012) 656-659.
7. M.J. Lee, C.B. Lee, D. Lee, S.R. Lee, M. Chang, J.H. Hur, Y.B. Kim, C.J. Kim, D.H. Seo, S. Seo, U.I. Chung, I.K. Yoo, K. Kim, Nat. Mater. 10 (2011) 625-630.
8. S.M. Bishop, H. Bakhru, J.O. Capulong, N.C. Cady, Appl. Phys. Lett. 100 (2012) 142111.
9. W. Moller, W. Eckstein, J.P. Biersack, Comput. Phys. Commun. 51 (1988) 355-368.
10. M. Nastasi, J.W. Mayer, J.K. Hirvonen, Ion-Solid Interactions- Fundamentals and Applications, Cambridge University Press, Cambridge, 1996.
11. R. Chandrasekharan, I. Park, R.I. Masel, M.A. Shannon, J. Appl. Phys. 98 (2005) 114908.
12. K. McKenna, A. Shluger, V. Iglesias, M. Porti, M. Nafria, M. Lanza, G. Bersuker, Microelectron. Eng. 88 (2011) 1272-1275.
13. D.S. Shang, L.D. Chen, Q. Wang, W.D. Yu, X.M. Li, J.R. Sun, B.G. Shen, J. Appl. Phys. 105 (2009).
14. J.J. Senkevich, T. Karabacak, D.L. Bae, T.S. Cale, J. Vac. Sci. Technol. B 24 (2006) 534-538.
15. C. Mahata, M.K. Bera, M.K. Hota, T. Das, S. Mallik, B. Majhi, S. Verma, P.K. Bose, C.K. Maiti, Microelectron. Eng. 86 (2009) 2180-2186.