Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

Chinese Physics B

Volumn 22, Issue 9, 2013, Pages

  Yang, Jing ^a   Zhao, De Gang ^a   Jiang, De Sheng ^a   Liu, Zong Shun ^a   Chen, Ping ^a   Li, Liang ^a   Wu, Liang Liang ^a   Le, Ling Cong ^a   Li, Xiao Jing ^a   He, Xiao Guang ^a   Wang, Hui ^b   Zhu, Jian Jun ^b   Zhang, Shu Ming ^b   Zhang, Bao Shun ^b   Yang, Hui ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

nitride materials; polarization; solar cell

Indexed keywords

ABSORPTION LAYER; CRYSTAL QUALITIES; ELECTRIC FIELD INDUCED; NITRIDE MATERIALS; PHOTOVOLTAIC PROPERTY; PIEZOELECTRIC POLARIZATIONS; POTENTIAL BARRIERS; SOLAR CELL PERFORMANCE;

CARRIER LIFETIME; ELECTRIC FIELDS; POLARIZATION;

SOLAR CELLS;

EID: 84885141483     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/22/9/098801     Document Type: Article

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