Modeling of polarization effects in InGaN PIN solar cells

Optical and Quantum Electronics

Volumn 42, Issue 11-13, 2011, Pages 699-703

  Lestrade, M ^a   Li, Z Q ^a   Xiao, Y G ^a   Li, Z M Simon ^a  

^a Crosslight Software Inc   (Canada)

Author keywords

N face growth; Nitride polarization; Numerical simulation; Solar cell

Indexed keywords

CONTACT LAYERS; DEVICE DESIGN; GRADED LAYERS; GROWTH DIRECTIONS; INTERFACE CHARGE; N-FACE GROWTH; POLARIZATION EFFECT;

GALLIUM COMPOUNDS; NITRIDES;

POLARIZATION;

EID: 80855132928     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-011-9458-7     Document Type: Conference Paper

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