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Volumn 50, Issue 13, 2013, Pages 107-116

Growth characteristics and properties of yttrium oxide thin films by atomic layer deposition from novel Y(iPrCp)3 precursor and O3

(4) Xu, Runshen a Selvaraj, Sathees K a Azimi, Nasim a Takoudis, Christos G a,b

a University of Illinois at Chicago (United States)

b University of Illinois at Chicago (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; GROWTH RATE; OXIDE FILMS; REFRACTIVE INDEX; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM OXIDE;

ANNEALING BEHAVIOR; DEPOSITION CYCLES; GROWTH CHARACTERISTIC; OXIDE THIN FILMS; PRECURSOR DOSAGE; REACTOR TEMPERATURES; SPECTRAL ELLIPSOMETRY; TEMPERATURE WINDOW;

ATOMIC LAYER DEPOSITION;

EID: 84885134544 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/05013.0107ecst Document Type: Conference Paper

Times cited : (11)

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