Tuning the electronic structure of tin sulfides grown by atomic layer deposition

ACS Applied Materials and Interfaces

Volumn 5, Issue 18, 2013, Pages 8889-8896

  Ham, Giyul ^a   Shin, Seokyoon ^a   Park, Joohyun ^a   Choi, Hagyoung ^a   Kim, Jinseo ^b   Lee, Young Ahn ^b   Seo, Hyungtak ^b   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

ALD; composition; electronic structure; SnSx; TDMASn; tin sulfides

Indexed keywords

ALD; DEPOSITION METHODS; DEPOSITION TEMPERATURES; ELECTRICAL CONDUCTIVITY; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; SNSX; TDMASN; TIN SULFIDE;

AMORPHOUS FILMS; BINDING ENERGY; CHEMICAL ANALYSIS; DEPOSITION; ELECTRONIC STRUCTURE; MOLECULAR ORBITALS; SULFUR COMPOUNDS; TIN; X RAY DIFFRACTION;

ATOMIC LAYER DEPOSITION;

EID: 84885062141     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am401127s     Document Type: Article

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