Polymorphic tin sulfide thin films of zinc blende and orthorhombic structures by chemical deposition

Journal of the Electrochemical Society

Volumn 155, Issue 7, 2008, Pages

  Avellaneda, David ^a   Nair, M T S ^a,b   Nair, P K ^a  

^a INSTITUTO DE ENERGÍAS RENOVABLES   (Mexico)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ACETIC ACID; ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; ENERGY GAP; HYDROCHLORIC ACID; LATTICE CONSTANTS; POLYCRYSTALLINE MATERIALS; TIN COMPOUNDS;

CHEMICAL BATHS; THIOACETAMIDE; ZINC BLENDE;

THIN FILMS;

EID: 44349145286     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2917198     Document Type: Article

References (31)

1. M. M. El-Nahass, H. M. Zeyada, M. S. Aziz, and N. A. El-Ghamaz, Opt. Mater., 20, 159 (2002).
2. H. Noguchi, A. Setiyadi, H. Tanamura, T. Nagatomo, and O. Omoto, Sol. Energy Mater. Sol. Cells, 35, 325 (1994).
3. J. B. Johnson, H. Jones, B. S. Latham, J. D. Parker, R. D. Engelken, and C. Barber, Semicond. Sci. Technol., 14, 501 (1999).
4. N. K. Reddy, Y. B. Hahn, M. Devika, H. R. Sumana, and K. R. Gunasekhar, J. Appl. Phys., 101, 093522 (2007).
5. S. Lopez and A. Ortiz, Semicond. Sci. Technol., 9, 2130 (1994).
6. K. T. R. Reddy, N. K. Reddy, and R. W. Miles, Sol. Energy Mater. Sol. Cells, 90, 3041 (2006).
7. A. Ortiz, J. C. Alonso, M. Garcia, and J. Toriz, Semicond. Sci. Technol., 11, 243 (1996).
8. L. S. Price, I. P. Parkin, A. M. E. Hardy, R. J. H. Clark, T. G. Hibbert, and K. C. Molloy, Chem. Mater., 11, 1792 (1999).
9. R. D. Engelken, H. E. McCloud, C. Lee, M. Slayton, and A. Ghoreshi, J. Electrochem. Soc., 134, 2696 (1987).
10. P. Pramanik, P. K. Basu, and S. Biswas, Thin Solid Films, 150, 269 (1987).
11. A. Tanusevsky, Semicond. Sci. Technol., 18, 501 (2003).
12. M. T. S. Nair and P. K. Nair, Semicond. Sci. Technol., 6, 132 (1991).
13. S. Cheng, Y. Chen, C. Huang, and G. Chen, Thin Solid Films, 500, 96 (2006).
14. M. Gunasekharan and M. Ichimura, Sol. Energy Mater. Sol. Cells, 91, 774 (2007).
15. D. Avellaneda, G. Delgado, M. T. S. Nair, and P. K. Nair, Thin Solid Films, 515, 771 (2007).
16. M. Parenteau and C. Carlone, Phys. Rev. B, 41, 5227 (1990).
17. L. Ehm, K. Knorr, P. Dera, A. Krimmel, P. Bouvier, and M. Mezouar, J. Phys.: Condens. Matter, 16, 3545 (2004).
18. A. N. Mariano and K. L. Chopra, Appl. Phys. Lett., 10, 282 (1967).
19. E. C. Greyson, J. E. Barton, and T. W. Odom, Small, 2, 368 (2006).
20. D. Avellaneda, M. T. S. Nair, and P. K. Nair, Mater. Res. Soc. Symp. Proc., 1012, 1012-Y12-29 (2007).
21. P. K. Nair, M. T. S. Nair, R. A. Zingaro, and E. A. Meyers, Thin Solid Films, 239, 85 (19994).
22. C. S. Barrette and T. M. Masalski, Structure of Metals, p. 668, McGraw Hill, New York (1966).
23. P. Boudjouk, D. J. Seidler, D. Grier, and G. J. McCarthy, Chem. Mater., 8, 1189 (1996).
24. H. Nozaki, M. Onoda, M. Sekita, K. Kosuda, and T. Wada, J. Solid State Chem., 178, 245 (2005).
25. National Institute of Standards and Technology (NIST): http://physics.nist.gov/PhysRefData/XrayMassCoef/cover.html, last accessed Feb. 2008.
26. B. E. McCandless, Mater. Res. Soc. Symp. Proc., 865, 75 (2005).
27. D. K. Schroder, Semiconductor Material and Device Characterization, p. 597, John Wiley & Sons, New York (1990).
28. R. H. Misho and W. A. Murad, Sol. Energy Mater. Sol. Cells, 27, 335 (1992).
29. G. Valiukonis, D. A. Guseinova, G. Krivait́, and A. Šileika, Phys. Status Solidi B, 135, 299 (1986).
30. O. Madelung, Semiconductors Other Than Group IV Elements and III-V Compounds (Data in Science and Technology), R. Poerschke, Editor-in-Chief, p. 45, Springer-Verlag, Berlin (1992).
31. S. M. Sze, Physics of Semiconductor Devices, p. 19, Wiley, New York (1981).